juliewright5804 juliewright5804

24-05-2023
Engineering

contestada

(a) Calculate the growth rate of a silicon layer from an SiCl4 source at 1200 oC. Use hg=1 cm/s, ks=2×106exp(-1.9 eV/kT) cm/s, and Ng=3×1016 atoms/cm3. (For silicon, N=5×1022 /cm3.)
(b) What is the change in growth rate if the temperature is increased by 25 oC?
(c) At what temperature does ks=hg? What is the growth rate at this temperature?

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